mm-Wave Phased Arrays in Silicon with Integrated Antennas

A. Babakhani, D. Rutledge, and A. Hajimiri

This work demonstrates W-band integrated dipole antennas and a four channel phased transceiver implemented in IBM 130 nm silicon germanium BiCMOS process. The chip includes the complete receiver, transmitter, signal generation blocks, phase shifters, and on-chip dipole antennas. A hemispherical silicon lens with diameter of about one inch is also used to remove the substrate modes. Measurement results show a maximum antenna gain of about +8 dB.