A 19.1dBm Segmented Power-Mixer Based Multi-Gbps mm-Wave Transmitter in 32nm SOI CMOS

K. Dasgupta, K. Sengupta, A. Pai, and A. Hajimiri

A high-power, fully-integrated, mm-wave power mixer based transmitter capable of generating high-speed, complex non-constant envelope modulations is implemented in a 32nm SOI CMOS technology. Segmented power generation approach is shown to be suitable for direct digital modulation as well as efficiency improvements at back-off power levels. The transmitter has a peak output power of 19.1dBm at 51GHz with a drain efficiency of 14.2% and a peak PAE of 10.1%. Measurements results show high-speed modulations for BPSK, QPSK, ASK, m-ASK and 16-QAM. Reliability of the transmitter has also been verified against worst case segmentation at 30% higher supply voltage.